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Fabian M. Bufler: Full-Band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe

Fabian M. Bufler

Full-Band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe

Enhancement of submicron device performance by scaling is facing more and more difficulties. This has triggered the search for alternatives. One promising approach is band-gap engineering using strained Si1-xGex layers grown on relaxed Si1-yGey substrates. However, performance estimations of such devices by drift-diffusion or hydrodynamic simulations require reliable low- and high-field transport parameters.
The main goal of this work is therefore to provide mobilities and energy relaxation times, via calculations with a sound physical basis, for all configurations of practical interest. This is achieved by considering the two most important aspects for this purpose: the full band structure as calculated by the most reliable method at present (the non-local empirical pseudopotential method including spin-orbit interaction) and new, accurate mobility measurements needed for adjusting the strength of alloy scattering, followed by transport calculations via full-band Monte Carlo simulations.
The results for the stationary transport parameters as well as additional transient simulations confirm that especially in strained Si and for holes in Ge-rich strained SiGe significant performance enhancements for MOSFETs/MODFETs can be expected. The advantage of the reduced band gap in strained SiGe for the performance of npn-HBTs is not impaired by mobility issues, because there is no substantial decrease of the out-of-plane minority-electron mobility for high doping concentrations.

  • Halbleinen: 188 Seiten
    Format: 24 x 16
    ISBN 978-3-89675-270-3

    78,98 € (Preisbindung aufgehoben)

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