utzverlag
Gerta Köster
Numerical Treatment of a Linear Model of Crystal Growth in a Vertical Bridgman Device
Single crystals are an important material in industrial applications such as the manufacturing of semiconductors or loser diodes. In this work a powerful numerical method is designed to simulate crystal growth of a binary alloy in a vertical Bridgman device. This is achieved in the frame of a linearized quasi-stationary model. The results of the numerical calculations confirm asymptotic analysis giving conditions that minimize the variation in the radial distribution of the dopant, the most important factor in growing high quality crystals.
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broschiert: 160 Seiten Format: 20,5 x 14,5 ISBN 978-3-89675-107-2 48,98 € (Preisbindung aufgehoben)
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